According to a July 7 report by Nikkei Asia, industry sources revealed that Mitsubishi Chemical and The Japan Steel Works (JSW) intend to ramp up their gallium nitride (GaN) production capacity by 50%.
The two firms will expand output of GaN substrates for next-generation power semiconductors, targeting a 50% capacity increase by 2027 compared with 2026 levels, to meet surging demand driven by electric vehicles (EVs), inverters and data center power supplies.
GaN withstands higher voltages than conventional silicon, and outperforms silicon carbide (SiC) in enabling high-speed current control and cutting power loss. Mitsubishi Chemical and JSW already doubled their substrate and seed crystal capacity in April this year versus fiscal 2021. Their next step is to lift capacity to three times the fiscal 2021 volume by April 2027, equivalent to a 50% uplift from 2026 capacity.
While the companies’ 4-inch GaN substrates are still undergoing customer qualification, booming demand has prompted the additional capacity expansion. The partners plan to roll out sample 6-inch substrates in fiscal 2026 and 8-inch substrate samples by fiscal 2028.
(Reprinted from https://news.eccn.com/）