Chinese IP provider InnoGrit recently held a product launch event in Shanghai, confirming its self-developed LPDDR6/5X Combo memory interface IP has been selected by a major Korean DRAM manufacturer. The company withheld the specific client’s name in official announcements, yet the industry widely identifies Samsung Electronics or SK Hynix as the partner in question.
The single-channel data transfer rate of this LPDDR6 IP hits 14.4 Gbps, representing a roughly 50% performance uplift versus the prior-generation LPDDR5X. The speed boost stems from fundamental architectural upgrades of LPDDR6: the transmission channel width is expanded from 16 bits to 24 bits, pushing the peak bandwidth of a single chip to 38.4 GB/s.
Furthermore, the IP integrates a full suite of advanced features including automatic and manual ECS calibration, Link ECC error correction, dynamic voltage and frequency scaling (DVFSL), as well as x24/x48 burst modes.
For AI workload optimization, the IP undergoes end-to-end timing tuning and iterative signal integrity simulation targeting frequent KV Cache read/write operations in large-model long-context scenarios, which effectively cuts transmission jitter and signal attenuation.
Notably, the IP is fully designed using domestic EDA tool suites and supports process nodes ranging from 28 nm down to 3 nm.
InnoGrit stated that its IP portfolios have enabled mass production of over 10 billion SoCs to date. Securing orders from leading Korean memory giants marks genuine reverse technology export of domestic IP within the high-end memory interface sector.
During the launch, InnoGrit also unveiled its complete high-bandwidth memory and connectivity IP matrix, featuring solutions such as HBM4, GDDR7, DDR5 MRDIMM, PCIe 6.0 and 224G SerDes. More than 30 top industrial chain enterprises including Samsung, TSMC and SMIC attended the event.
(Reprinted from https://news.eccn.com/）